STE30NK90Z_06 Datasheet, PDF (5/13 Pages) STMicroelectronics – N-channel 900V - 0.21Ω - 28A ISOTOP Zener-Protected SuperMESTM MOSFET

STE30NK90Z
Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
Min.
I_SD
I_SDM(1)
Source-drain current
Source-drain current
(pulsed)
V_SD(2) Forward on voltage
I_SD = 28 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time I_SD = 26 A, di/dt = 100 A/µs
Reverse recovery charge V_DD = 100 V, T_j = 25°C
Reverse recovery current (see Figure 16)
t_rr
Q_rr
I_RRM
Reverse recovery time I_SD = 26 A, di/dt = 100 A/µs
Reverse recovery charge V_DD = 100 V, T_j = 150°C
Reverse recovery current (see Figure 16)
1. Pulse width limited by safe operating area%
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5
Typ. Max. Unit
28 A
112 A
2
V
1
µs
18.9
µC
36.6
A
1.33
µs
25.2
µC
37.8
A
Table 7. Gate-source zener diode
Symbol
Parameter
Test conditions Min. Typ.
BV_GSO
Gate-source breakdown Igs=± 1mA (Open
voltage
Drain)
30
Max. Unit
V
2.1
Protection features of gate-to-source zener diodes
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
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