STE30NK90Z_06 Datasheet, PDF (3/13 Pages) STMicroelectronics – N-channel 900V - 0.21Ω - 28A ISOTOP Zener-Protected SuperMESTM MOSFET

STE30NK90Z
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
V_DS
V_DGR
V_GS
I_D
I_D
I_DM(1)
P_tot
Drain-source voltage (V_GS = 0)
Drain-gate voltage (R_GS = 20 kΩ)
Gate- source voltage
Drain current (continuous) at T_C = 25°C
Drain current (continuous) at T_C = 100°C
Drain current (pulsed)
Total dissipation at T_C = 25°C
Derating Factor
V_ESD(G-S)
dv/dt ⁽²⁾
Gate source ESD(HBM-C=100pF, R=1.5KW)
Peak diode recovery voltage slope
V_ISO
Insulation withstand voltage (AC-RMS) from all
four terminals to external heatsink
T_stg
Storage temperature
T_j
Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. I_SD ≤28A, di/dt ≤200A/µs, V_DD ≤V_(BR)DSS,
Value
900
900
± 30
28
18
112
500
4.3
6.5
4.5
2500
-65 to 150
Table 2. Thermal data
Rthj-case Thermal resistance junction-case max
0.23
Rthj-amb Thermal resistance junction-ambient max
40
Unit
V
V
V
A
A
A
W
W/°C
KV
V/ns
V
°C
°C/W
°C/W
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
I_AR
(pulse width limited by T_j Max)
Single pulse avalanche energy
E_AS
(starting T_j = 25 °C, I_D = I_AR, V_DD = 35 V)
Max Value
Unit
13
A
500
mJ
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