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| STE30NK90Z_06 Datasheet, PDF (4/13 Pages) STMicroelectronics – N-channel 900V - 0.21Ω - 28A ISOTOP Zener-Protected SuperMESTM MOSFET | |||
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Electrical characteristics
2
Electrical characteristics
STE30NK90Z
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS breakdown voltage
Zero gate voltage
IDSS
drain current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
ID = 1 mA, VGS = 0
VDS = Max Rating
VDS = Max Rating,
TC = 125 °C
VGS = ± 20V
VDS = VGS, ID = 150 µA
VGS = 10V, ID = 14 A
Min. Typ. Max. Unit
900
V
10 µA
100 µA
±100 µA
3 3.75 4.5 V
0.21 0.26 â¦
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs(1)
Forward
transconductance
VDS = 15 V, ID = 14 A
26
S
Ciss
Coss
Crss
Input capacitance
output capacitance
reverse transfer
capacitance
VDS = 25V, f = 1 MHz,
VGS = 0
12000
pF
852
pF
166
pF
Coss
(2)
eq.
Equivalent output
capacitance
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-on delay time
rise time
turn-off delay time
fall time
Total gate charge
gate-source charge
gate-drain charge
VGS = 0V,
VDS = 0V to 720 V
VDD = 450 V, ID = 13 A
RG = 4.7⦠VGS = 10 V
(see Figure 14)
VDD = 720 V, ID = 26 A,
VGS = 10V
(see Figure 15)
377
pF
67
ns
59
ns
250
ns
72
ns
350 490 nC
51
nC
190
nC
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/13
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