STE250NS10_06 Datasheet, PDF (5/12 Pages) STMicroelectronics – N-channel 100V - 0.0045Ω - 220A - ISOTOP STripFET™ Power MOSFET

STE250NS10
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 220A, V_GS = 0
I_SD = 220A, V_DD = 30V
di/dt = 100A/µs,
T_j = 150°C
(see Figure 15)
220 A
880 A
1.5 V
200
ns
1.35
µC
13.5
A
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
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