STE250NS10_06 Datasheet, PDF (3/12 Pages) STMicroelectronics – N-channel 100V - 0.0045Ω - 220A - ISOTOP STripFET™ Power MOSFET

STE250NS10
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
V_DS
V_GS
I_D
I_D
I_DM ⁽¹⁾
P_TOT
dv/dt⁽²⁾
Drain-source voltage (v_gs = 0)
Gate- source voltage
Drain current (continuos) at T_C = 25°C
Drain current (continuos) at T_C = 100°C
Drain current (pulsed)
Total dissipation at T_C = 25°C
Derating factor
Peak diode recovery voltage slope
V_ISO
T_J
T_stg
Insulation winthstand voltage (DC)
Operating junction temperature
Storage temperature
1. Pulse width limited by safe operating area
2. I_SD ≤220A, di/dt ≤200A/µs, V_DD ≤V_(BR)DSS, T_j ≤T_JMAX
Table 2. Thermal data
R_thj-case Thermal resistance junction-case Max
R_thj-a Thermal resistance junction-ambient Max
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
I_AS
(pulse width limited by Tj Max)
Single pulse avalanche energy
E_AS
(starting Tj=25°C, Id=Iar, Vdd=64V)
Electrical ratings
Value
100
±20
220
156
880
500
4
3.5
2500
150
-55 to 150
Unit
V
V
A
A
A
W
W/°C
V/ns
V
°C
0.25
°CW
50
°CW
Value
Unit
220
A
800
mJ
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