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| STE250NS10_06 Datasheet, PDF (4/12 Pages) STMicroelectronics – N-channel 100V - 0.0045Ω - 220A - ISOTOP STripFET™ Power MOSFET | |||
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Electrical characteristics
2
Electrical characteristics
STE250NS10
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS Breakdown voltage
IDSS
Zero gate voltage
Drain current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
ID = 1 mA, VGS = 0
VDS = Max rating
VDS= Max rating,
TC=125°C
VGS = ± 20V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 125A
Table 5. Dynamic
Symbol
Parameter
Test conditions
gfs
Ciss
Coss
Crss
Qg
Qgs
Qgd
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
VDS = 20V, ID=70A
VDS = 25V, f = 1 MHz,
VGS = 0
VDD = 50V, ID = 22A,
VGS = 10V
Table 6. Switching times
Symbol
Parameter
Test conditions
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off-delay time
Fall time
tr(Voff)
tf
tc
Off-voltage rise time
fall time
cross-over time
VDD=50 V, ID=125A,
RG=4.7â¦, VGS= 10V
(see Figure 13)
VDD=50 V, ID=125A,
RG=4.7â¦, VGS= 10V
(see Figure 13)
VDD=80V, ID=220A,
RG=4.7â¦, VGS=10V
(see Figure 15)
Min. Typ. Max. Unit
100
V
50 µA
500 µA
±400 nA
2
3
4
V
0.0045 0.0055 â¦
Min. Typ. Max. Unit
60
S
31
nF
4.3
nF
1.2
nF
900
nC
160
nC
330
nC
Min. Typ. Max. Unit
110
ns
380
ns
ns
1100
ns
300
950
ns
330
ns
600
ns
4/12
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