STE180NE10_07 Datasheet, PDF (5/12 Pages) STMicroelectronics – N-channel 100V - 4.5mΩ - 180A - ISOTOP STripFET™ Power MOSFET

STE180NE10
Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
t_rr
Q_rr
I_RRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
I_SD = 180A, V_GS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 100A,
di/dt = 100A/µs,
V_DD = 50V, T_j = 150°C
(see Figure 14)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
180 A
540 A
1.5 V
235
ns
1.65
µC
14
A
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