STE180NE10_07 Datasheet, PDF (4/12 Pages) STMicroelectronics – N-channel 100V - 4.5mΩ - 180A - ISOTOP STripFET™ Power MOSFET

Electrical characteristics
2
Electrical characteristics
STE180NE10
(T_CASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Drain-source
V_{(BR)DSS breakdown voltage}
I_DSS
Zero gate voltage
drain current (V_GS = 0)
I_GSS
V_GS(th)
R_DS(on)
Gate-body leakage
current (V_DS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min.
I_D =1mA, V_GS =0
100
V_DS = max rating
V_DS = max rating,
T_C = 125°C
V_GS = ± 20V
V_DS = V_GS, I_D = 250µA
2
V_GS = 10V, I_D = 40A
Typ. Max. Unit
V
4
µA
40
µA
±400 nA
3
4
V
4.5
6
Ω
Table 5.
Symbol
Dynamic
Parameter
Test conditions
g_fs ⁽¹⁾
C_iss
C_oss
C_rss
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS>I_D(on)xR_DS(on)max
I_D=80 A
V_DS = 25V, f = 1MHz,
V_GS = 0
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V_DD = 90V, I_D = 490A
R_G = 4.7Ω V_GS = 10V
(see Figure 12)
Q_g
Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD = 80V, I_D = 180A,
V_GS = 10V, R_G = 4.7Ω
(see Figure 13)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Min. Typ. Max. Unit
30
S
21
nF
2.5
nF
0.9
nF
100
ns
600
ns
430
ns
440
ns
585 795 nC
120
nC
210
nC
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