STE180NE10_07 Datasheet, PDF (3/12 Pages) STMicroelectronics – N-channel 100V - 4.5mΩ - 180A - ISOTOP STripFET™ Power MOSFET

STE180NE10
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
V_DS
V_DGR
V_GS
I_D
I_D
I_DM ⁽¹⁾
P_TOT
Drain-source voltage (V_GS = 0)
Drain-gate voltage (R_GS = 20kΩ)
Gate-source voltage
Drain current (continuous) at T_C = 25°C
Drain current (continuous) at
T_C = 100°C
Drain current (pulsed)
Total dissipation at T_C = 25°C
Derating factor
V_ISO Insulation withstand voltage (AC-RMS)
T_j
Operating junction temperature
T_stg storage temperature
1. Pulse width limited by safe operating area
Table 2. Thermal data
Rthj-case Thermal resistance junction-case max
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche Current, Repetitive or Not-
I_AR
Repetitive
(pulse width limited by T_j max)
Single Pulse Avalanche Energy
E_AS (starting T_j = 25 °C, I_D = I_AR,
V_DD = 25 V)
Electrical ratings
Value
100
100
± 20
180
119
360
360
2.88
2500
-55 to 150
Unit
V
V
V
A
A
A
W
W/°C
V
°C
0.37
°C/W
Max value
Unit
60
A
720
mJ
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