STE140NF20D Datasheet, PDF (5/13 Pages) STMicroelectronics – N-channel 200 V, 10 mOmh typ., 140 A STripFET II Power MOSFET (with fast diode) in an ISOTOP package

STE140NF20D
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V_DD = 100 V, I_D= 70 A,
R_G=4.7 Ω, V_GS =10 V
(see Figure 15)
Min. Typ. Max. Unit
232
ns
218
ns
-
-
283
ns
250
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
I_SD
I_SDM(1)
V_SD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 140 A, V_GS=0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 140 A,
di/dt = 100 A/µs,
V_DD= 60 V
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 140 A,
di/dt = 100 A/µs,
V_DD= 60 V, Tj=150 °C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
-
140 A
-
560 A
-
1.5 V
190
ns
- 1.4
nC
14
A
257
ns
- 2.4
µC
18
A
Doc ID 15299 Rev 4
5/13