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STE140NF20D Datasheet, PDF (4/13 Pages) STMicroelectronics – N-channel 200 V, 10 mOmh typ., 140 A STripFET II Power MOSFET (with fast diode) in an ISOTOP package
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Electrical characteristics
2
Electrical characteristics
STE140NF20D
(TCASE = 25 °C unless otherwise specified)
Table 4.
Symbol
On/off states
Parameter
Test conditions
Min. Typ.
V(BR)DSS
Drain-source breakdown
voltage
ID = 1 mA, VGS= 0
200
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 200 V,
VDS = 200 V, TC = 125 °C
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20 V
VGS(th) Gate threshold voltage
VDS= VGS, ID = 250 µA
2
3
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 70 A
10
Max. Unit
V
10 µA
100 µA
±100 nA
4
V
12 mΩ
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f=1 MHz,
VGS=0
11100
pF
- 2190 -
pF
334
pF
Co(tr) (1)
Equivalent capacitance time
related
- 1525 -
pF
Co(er) (2)
Equivalent capacitance
energy related
VDS = 0 to 160 V, VGS = 0,
- 1139 -
pF
Rg Intrinsic gate resistance
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
f = 1 MHz open drain
VDD = 160 V, ID = 140 A,
VGS= 10 V
(see Figure 16)
- 1.4
-
Ω
338
nC
-
47
-
nC
183
nC
1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
4/13
Doc ID 15299 Rev 4
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