STE140NF20D Datasheet, PDF (3/13 Pages) STMicroelectronics – N-channel 200 V, 10 mOmh typ., 140 A STripFET II Power MOSFET (with fast diode) in an ISOTOP package

STE140NF20D
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS
V_GS
I_D
I_D
I_DM(1)
P_TOT
I_AR(2)
E_AS(3)
dv/dt⁽⁴⁾
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C=100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Avalanche current, repetitive or not repetitive
Single pulse avalanche energy
Peak diode recovery voltage slope
V_ISO Insulation winthstand voltage (AC-RMS)
T_J
Operating junction temperature
T_stg
Storage temperature
1. Pulse width limited by safe operating area
2. Pulse width limited by Tjmax
3. Strating Tj = 25 °C, I_D = I_AR, V_DD = 50 V
4. I_SD ≤ 140 A, di/dt ≤ 1000 A/µs, V_DD ≤ 80% V_(BR)DSS
Table 3. Thermal resistance
Symbol
Parameter
R_thj-case
R_thj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
Electrical ratings
Value
200
± 20
140
88
560
500
140
800
25
2500
- 55 to 150
Unit
V
V
A
A
A
W
A
mJ
V/ns
V
°C
Value
0.25
40
Unit
°C/W
°C/W
Doc ID 15299 Rev 4
3/13