STD9HN65M2 Datasheet, PDF (5/16 Pages) STMicroelectronics – 100% avalanche tested

STD9HN65M2
Symbol
Parameter
Table 8: Source drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
ISD
ISDM⁽¹⁾
VSD⁽²⁾
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0 V, ISD = 5 A
ISD = 5 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 16: "
Test circuit for inductive load
switching and diode recovery
times")
-
5.5 A
-
22 A
-
1.6 V
- 268
ns
- 1.7
µC
- 12.5
A
trr
Reverse recovery time
ISD = 5 A, di/dt = 100 A/µs,
- 408
ns
Qrr
Reverse recovery charge
VDD = 60 V, Tj = 150 °C (see
Figure 16: " Test circuit for
- 2.6
µC
IRRM
Reverse recovery current
inductive load switching and
diode recovery times")
- 13
A
Notes:
(1) _{Pulse width is limited by safe operating area.}
(2) _{Pulse test: pulse duration = 300 µs, duty cycle 1.5%.}
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