STD9HN65M2 Datasheet, PDF (4/16 Pages) STMicroelectronics – 100% avalanche tested

Electrical characteristics
STD9HN65M2
2
Electrical characteristics
(T_C = 25 °C unless otherwise specified).
Table 5: Static
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage drain
current
Gate-body leakage current
Gate threshold voltage
Static drain-source on-
resistance
VGS = 0 V, VDS = 650 V
VGS = 0 V, VDS = 650 V,
TC = 125 °C
VDS = 0 V, VGS = ±25 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 2.5 A
Min. Typ. Max. Unit
650
V
1 µA
100 µA
±10 µA
2
3
4
V
0.71 0.82 Ω
Symbol
Parameter
Ciss Input capacitance
Coss Output capacitance
Crss
Reverse transfer
capacitance
Coss
(1)
eq.
Equivalent output
capacitance
RG Intrinsic gate resistance
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
Table 6: Dynamic
Test conditions
VDS= 100 V, f = 1 MHz,
VGS = 0 V
Min. Typ. Max. Unit
- 325 - pF
-
16
-
pF
- 0.85 - pF
VDS = 0 V to 520 V, VGS = 0 V -
109 - pF
f = 1 MHz open drain
VDD = 520 V, ID = 5 A,
VGS = 10 V (see Figure 15:
"Gate charge test circuit")
-
5.6 -
Ω
- 11.5 - nC
- 2.5 - nC
-
5
- nC
Notes:
(1) _{Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS}
increases from 0 to 80% VDSS.
Symbol
Parameter
td(on)
tr
td(off)
Turn-on delay time
Rise time
Turn-off-delay time
tf
Fall time
Table 7: Switching times
Test conditions
VDD = 325 V, ID = 2.5 A
RG = 4.7 Ω, VGS = 10 V (see
Figure 14: "Switching times
test circuit for resistive load"
and Figure 19: "Switching time
waveform")
Min. Typ. Max. Unit
- 7.5
-
ns
- 4.6
-
ns
-
24
-
ns
- 14.5 -
ns
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