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STD95NH02L_06 Datasheet, PDF (5/15 Pages) STMicroelectronics – N-channel 24V - 0.005239ohm - 80A - DPAK Ultra low gate charge STripFET TM Power MOSFET
STD95NH02L
Electrical characteristics
Table 5. Source drain diode
Symbol
Parameter
Test conditions
Min.
ISD
ISDM (1)
Source-drain current
Source-drain current
(pulsed)
VSD (2) Forward on voltage
ISD = 40A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time ISD = 80A, di/dt = 100A/µs,
Reverse recovery charge VDD = 20V, Tj = 150°C
Reverse recovery current (see Figure 15)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Typ.
42
50.4
2.4
Max. Unit
80
A
320 A
1.3 V
ns
nC
A
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