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STD95NH02L_06 Datasheet, PDF (3/15 Pages) STMicroelectronics – N-channel 24V - 0.005239ohm - 80A - DPAK Ultra low gate charge STripFET TM Power MOSFET
STD95NH02L
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Vspike (1) Drain-source voltage rating
VDS Drain-source voltage (VGS = 0)
VDGR Drain-gate voltage (RGS = 20kΩ)
VGS
ID (2)
ID(2)
IDM (3)
Gate-source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
PTOT Total dissipation at TC = 25°C
Derating factor
EAS (4) Single pulse avalanche energy
Tj
Operating junction temperature
Tstg Storage temperature
1. Guaranted when external Rg= 4.7Ω and Tf < Tfmax
2. Value limited by wire bonding
3. Pulse width limited by safe operating area
4. Starting Tj =25°C, Id = 40A, Vdd = 22V
Value
30
24
24
± 20
80
68
320
100
0.67
600
-55 to 175
Table 2. Thermal data
Rthj-case Thermal resistance junction-case max
1.5
Rthj-amb Thermal resistance junction-to ambient max
100
TJ
Maximum lead temperature for soldering purpose
275
Unit
V
V
V
V
A
A
A
W
W/°C
mJ
°C
°C/W
°C/W
°C
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