STD95NH02L_06 Datasheet, PDF (4/15 Pages) STMicroelectronics – N-channel 24V - 0.005239ohm - 80A - DPAK Ultra low gate charge STripFET TM Power MOSFET

Electrical characteristics
2
Electrical characteristics
STD95NH02L
(T_CASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Drain-source
V_{(BR)DSS breakdown voltage}
I_DSS
I_GSS
V_GS(th)
Zero gate voltage
drain current (V_GS = 0)
Gate-body leakage
current (V_DS = 0)
Gate threshold voltage
R_DS(on)
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
I_D = 250µA, V_GS =0
V_DS = 20V
V_DS = 20V, T_C = 125°C
V_GS = ± 20V
V_DS = V_GS, I_D = 250µA
V_GS = 10V, I_D = 40A
V_GS = 5V, I_D = 40A
24
V
1
µA
10
µA
±100 nA
1
V
0.0039 0.005 Ω
0.0055 0.009 Ω
Table 4. Dynamic
Symbol
Parameter
Test conditions
g_fs ⁽¹⁾
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
Q_oss(2)
Q_gls(3)
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Output charge
Third-quadrant gate
chatge
R_G Gate Input Resistance
V_DS = 10V, I_D = 10A
V_DS = 15V, f = 1MHz,
V_GS = 0
V_DD = 12V, I_D = 40A
R_G = 4.7Ω V_GS = 10V
(see Figure 13)
V_DD = 12V, I_D = 80A,
V_GS = 5V, R_G = 4.7Ω
(see Figure 14)
V_DS =19V, V_GS =0V
V_DS < 0V, V_GS = 5V
f=1MHz Gate DC
Bias =0 Test Signal
Level =20mV
Open Drain
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Q_oss.= C_oss * ∆ Vin, C_oss = C_gd + C_gd. See Chapter 4: Appendix A
3. Gate charge for synchronous operation
Min. Typ. Max. Unit
30
S
2070
pF
990
pF
90
pF
20
ns
110
ns
47
ns
20
ns
17
nC
7.6
nC
6.8
nC
22.6
nC
15
nC
1.8
Ω
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