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STD86N3LH5 Datasheet, PDF (5/16 Pages) STMicroelectronics – N-channel 30 V, 0.0045 Ohm , 80 A, DPAK STripFET V Power MOSFET
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STD86N3LH5
Electrical characteristics
Table 6. Switching on/off (inductive load)
Symbol
Parameter
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 15 V, ID = 40 A,
RG = 4.7 Ω, VGS = 5 V
Figure 15
Min. Typ. Max. Unit
6
-
14
ns
-
ns
23.6
ns
-
-
10.8
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 40 A, VGS = 0
ISD = 80 A,
di/dt = 100 A/µs,
VDD = 20 V
Figure 17
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
80 A
-
-
320 A
-
-
1.1 V
31.8
ns
- 26.1 - nC
1.6
A
Doc ID 15575 Rev 2
5/16
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