STD86N3LH5 Datasheet, PDF (3/16 Pages) STMicroelectronics – N-channel 30 V, 0.0045 Ohm , 80 A, DPAK STripFET V Power MOSFET

STD86N3LH5
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS Drain-source voltage (V_GS = 0)
V_DS Drain-source voltage (V_GS = 0) @ T_JMAX
V_GS
I_D ⁽¹⁾
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
I_D
I_DM ⁽²⁾
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
P_TOT Total dissipation at T_C = 25 °C
Derating factor
E_AS ⁽³⁾ Single pulse avalanche energy
T_stg Storage temperature
T_j
Max. operating junction temperature
1. Limited by wire bonding
2. Pulse width limited by safe operating area
3. Starting Tj = 25°C, I_D = 40 A, V_DD = 25 V
Table 3. Thermal resistance
Symbol
Parameter
R_thj-case Thermal resistance junction-case max
R_thj-pcb ⁽¹⁾ Thermal resistance junction-pcb max
1. When mounted on 1 inch² FR-4 Oz Cu board
Electrical ratings
Value
30
35
± 20
80
55
320
70
0.47
165
-55 to 175
175
Unit
V
V
V
A
A
A
W
W/°C
mJ
°C
°C
Value
2.14
50
Unit
°C/W
°C/W
Doc ID 15575 Rev 2
3/16