English
Language : 

STD86N3LH5 Datasheet, PDF (4/16 Pages) STMicroelectronics – N-channel 30 V, 0.0045 Ohm , 80 A, DPAK STripFET V Power MOSFET
◁
Electrical characteristics
2
Electrical characteristics
STD86N3LH5
(TCASE = 25 °C unless otherwise specified)
Table 4. Static
Symbol
Parameter
V(BR)DSS
Drain-source breakdown
Voltage
IDSS
IGSS
VGS(th)
Zero gate voltage drain
current (VGS = 0)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
RDS(on)
Static drain-source on
resistance
Test conditions
ID = 250 µA, VGS= 0
VDS = 20 V
VDS = 20 V,Tc = 125 °C
VGS = ± 20 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 40 A
VGS = 5 V, ID = 40 A
Min. Typ. Max. Unit
30
-
-
-
-
V
1 µA
10 µA
-
-
±100 nA
1
1.8 2.5 V
- 0.0045 0.005 Ω
- 0.0055 0.0065 Ω
Table 5. Dynamic
Symbol
Parameter
Ciss
Coss
Crss
Qg
Qgs
Qgd
Qgs1
Qgs2
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Pre Vth gate-to-source
charge
Post Vth gate-to-source
charge
RG Gate input resistance
Test conditions
VDS = 25 V, f=1 MHz,
VGS = 0
VDD = 15 V, ID = 80 A
VGS = 5 V
Figure 16
VDD = 15 V, ID = 80 A
VGS = 5 V
Figure 16
f = 1 MHz gate bias
Bias = 0 test signal
level = 20 mV
open drain
Min. Typ. Max. Unit
1850
pF
-
380
- pF
58
pF
14
nC
-
6.8
- nC
4.7
nC
2.3
nC
-
-
4.5
nC
-
1.2
-
Ω
4/16
Doc ID 15575 Rev 2
 ▷