STD7NM80 Datasheet, PDF (5/17 Pages) STMicroelectronics – N-channel 800 V, 0.95 Ω, 6.5 A TO-220, TO-220FP, IPAK, DPAK MDmesh™ Power MOSFET

STD7NM80-1, STD7NM80, STF7NM80, STP7NM80
Electrical characteristics
Table 7.
Symbol
Switching times
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
Min. Typ. Max. Unit
20
ns
V_DD = 400 V, I_D = 3.25 A,
8
ns
R_G=4.7 Ω, V_GS=10 V
-
-
35
ns
(see Figure 18)
10
ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
I_SD
I_SDM
V_SD(1)
t_rr
Q_rr
I_RRM
t_rr
Q_rr
I_RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 6.5 A, V_GS=0
I_SD = 6.5 A,V_DD= 50 V
di/dt=100 A/µs
(see Figure 20)
I_SD = 6.5 A,V_DD= 50 V
di/dt=100 A/µs,
Tj=150 °C
(see Figure 20)
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
6.5 A
-
26 A
-
1.3 V
460
ns
-
4
µC
17
A
680
ns
-
6
µC
17
A
Doc ID 12573 Rev 3
5/17