STD7NM80 Datasheet, PDF (4/17 Pages) STMicroelectronics – N-channel 800 V, 0.95 Ω, 6.5 A TO-220, TO-220FP, IPAK, DPAK MDmesh™ Power MOSFET

Electrical characteristics
STD7NM80-1, STD7NM80, STF7NM80, STP7NM80
2
Electrical characteristics
(T_CASE = 25 °C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter
Test conditions
Min. Typ. Max. Unit
V_(BR)DSS
Drain-source breakdown
voltage
I_DSS
I_GSS
V_GS(th)
R_DS(on)
Zero gate voltage drain
current (V_GS = 0)
Gate body leakage current
(V_DS = 0)
Gate threshold voltage
Static drain-source on
resistance
I_D = 1 mA, V_GS= 0
V_DS = Max rating,
V_DS = Max rating,Tc = 125 °C
V_GS = ± 30 V
V_DS= V_GS, I_D = 250 µA
V_GS= 10 V, I_D= 3.25 A
800
V
1 µA
100 µA
±100 nA
34 5V
0.95 1.05 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
g_fs(1)
C_iss
C_oss
C_rss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS =15 V, I_D= 3.25 A
V_DS =25 V, f=1 MHz, V_GS=0
Rg Gate input resistance
f=1MHz Gate DC Bias=0
Test signal level=20 mV
Open drain
Q_g Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD=640 V, I_D = 6.5 A
V_GS =10 V
(see Figure 19)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max. Unit
-4
-
S
620
pF
- 460 - pF
15
pF
-7
-
Ω
18
nC
-4
- nC
11
nC
4/17
Doc ID 12573 Rev 3