STD7NM80 Datasheet, PDF (3/17 Pages) STMicroelectronics – N-channel 800 V, 0.95 Ω, 6.5 A TO-220, TO-220FP, IPAK, DPAK MDmesh™ Power MOSFET

STD7NM80-1, STD7NM80, STF7NM80, STP7NM80
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
TO-220, IPAK
DPAK
TO-220FP
Unit
V_DS Drain-source voltage (V_GS=0)
V_GS Gate-source voltage
I_D Drain current (continuous) at T_C = 25 °C
I_D Drain current (continuous) at T_C = 100 °C
I_DM ⁽²⁾ Drain current (pulsed)
P_TOT Total dissipation at T_C = 25 °C
V_ISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1 s;T_C=25 °C)
T_j Operating junction temperature
T_stg Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
800
V
± 30
V
6.5
6.5 ⁽¹⁾
A
4
4 ⁽¹⁾
A
26
26 ⁽¹⁾
A
90
25
W
--
2500
V
-55 to 150
°C
Table 3.
Symbol
Thermal data
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-amb max
T_l
Maximum lead temperature for soldering
purpose
TO-220
IPAK,
DPAK
TO-220FP Unit
1.38
62.5
100
5
°C/W
62.5 °C/W
300
°C
Table 4.
Symbol
Avalanche characteristics
Parameter
I_AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
E_{AS (starting Tj = 25 °C, ID=IAS, VDD= 50 V)}
Max value
Unit
1
A
240
mJ
Doc ID 12573 Rev 3
3/17