STD7NM64N Datasheet, PDF (5/16 Pages) STMicroelectronics – Low input capacitance and gate charge

STD7NM64N
Electrical characteristics
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Table 7. Switching times
Test conditions
V_DD = 300 V, I_D = 2.5 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 13)
Min. Typ. Max Unit
-
7
- ns
-
10
- ns
-
26
- ns
-
12
- ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 5 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 5 A, di/dt = 100 A/µs
V_DD = 60 V (see Figure 18)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 5 A, di/dt = 100 A/µs
V_DD = 60 V, T_j = 150 °C
(see Figure 18)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min.
-
-
-
-
-
-
-
-
-
Typ.
213
1.5
14
265
1.8
14
Max. Unit
5A
20 A
1.3 V
ns
μC
A
ns
μC
A
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