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| STD7NM64N Datasheet, PDF (1/16 Pages) STMicroelectronics – Low input capacitance and gate charge | |||
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STD7NM64N
N-channel 640 V, 5 A, 0.88 Ω typ., MDmesh⢠II Power MOSFET
in a DPAK package
Datasheet - production data
Features
TAB
3
1
DPAK
Order code
STD7NM64N
VDS
640 V
RDS(on) max. ID
1.05 Ω
5A
⢠100% avalanche tested
⢠Low input capacitance and gate charge
⢠Low gate input resistance
Applications
⢠Switching applications
Figure 1. Internal schematic diagram
' 7$%
*
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh⢠technology. This revolutionary Power
MOSFET associates a vertical structure to the
companyâs strip layout to yield one of the worldâs
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
6
$0Y
Order code
STD7NM64N
Table 1. Device summary
Marking
Packages
7NM64N
DPAK
Packaging
Tape and reel
August 2013
This is information on a product in full production.
DocID025081 Rev 1
1/16
www.st.com
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