STD7NM64N Datasheet, PDF (3/16 Pages) STMicroelectronics – Low input capacitance and gate charge

STD7NM64N
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
V_DS
V_GS
I_D
I_D
I_DM ⁽¹⁾
P_TOT
dv/dt ⁽²⁾
dv/dt ⁽³⁾
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
T_stg Storage temperature
T_j Max. operating junction temperature
1. Pulse width limited by safe operating area
2. I_SD ≤ 5 A, di/dt ≤ 400 A/µs, V_DS(peak) < V_(BR)DSS
3. V_DS ≤ 512 V
640
± 25
5
3
20
60
15
50
- 55 to 150
150
Symbol
Table 3. Thermal data
Parameter
R_thj-case Thermal resistance junction-case max
R_thj-pcb(1) Thermal resistance junction-pcb max
1. When mounted on 1 inch² FR-4, 2 Oz copper board
Value
2.08
50
Symbol
Table 4. Thermal data
Parameter
I_AR
Avalanche current, repetitive or not-
repetitive (pulse width limited by T_j max)
Single pulse avalanche energy
E_{AS (starting Tj = 25°C, ID = IAR, VDD = 50 V)}
Value
2
119
Unit
V
V
A
A
A
W
V/ns
V/ns
°C
°C
Unit
°C/W
°C/W
Unit
A
mJ
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