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STD7NM50N Datasheet, PDF (5/17 Pages) STMicroelectronics – N-channel 500V - 0.70Ω - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET
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STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 250V, ID = 2.5A,
RG = 4.7Ω, VGS = 10V
(see Figure 15)
Min Typ Max Unit
7
ns
5
ns
40
ns
9
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min Typ Max Unit
ISD
ISDM(1)
VSD(2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5A, VGS = 0
ISD =5A, di/dt =100A/µs,
VDD=100V, Tj=25°C
(see Figure 17)
ISD =5A, di/dt =100A/µs,
VDD=100V, Tj=150°C
(see Figure 17)
5
A
20 A
1.3 V
250
ns
2
µC
13
A
330
ns
2
µC
13
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
5/17
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