STD7NM50N Datasheet, PDF (3/17 Pages) STMicroelectronics – N-channel 500V - 0.70Ω - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET

STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
TO-220 / DPAK
IPAK
TO-220FP
V_DS
Drain-source voltage (V_GS=0)
V_GS
Gate-source voltage
I_D
Drain current (continuous) at T_C = 25°C
I_D
Drain current (continuous) at T_C = 100°C
I_DM ⁽²⁾ Drain current (pulsed)
P_TOT Total dissipation at T_C = 25°C
dv/dt ^{(3) Peak diode recovery voltage slope}
V_ISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1s;T_C=25°C)
T_j
Operating junction temperature
T_stg
Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD ≤5A, di/dt ≤400A/µs, V_DD =80% V_(BR)DSS
500
± 25
5
5 ⁽¹⁾
3
3 ⁽¹⁾
20
20 ⁽¹⁾
45
20
15
--
2500
-55 to 150
Unit
V
V
A
A
A
W
V/ns
V
°C
Table 2. Thermal data
Symbol
Parameter
Max value
TO-220 / DPAK
IPAK
TO-220FP
Rthj-case Thermal resistance junction-case max
2.78
6.25
Rthj-amb Thermal resistance junction-amb max
62.5
T_l
Maximum lead temperature for soldering
purpose
300
Unit
°C/W
°C/W
°C
Table 3. Avalanche characteristics
Symbol
Parameter
Max value
Unit
I_AS
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
2
A
Single pulse avalanche energy
E_AS
(starting Tj=25°C, I_D=I_AS, V_DD= 50V)
100
mJ
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