STD7NM50N Datasheet, PDF (4/17 Pages) STMicroelectronics – N-channel 500V - 0.70Ω - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET

Electrical characteristics
STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N
2
Electrical characteristics
(T_CASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min Typ Max Unit
V_(BR)DSS
Drain-source breakdown
voltage
dv/dt^{(1) Drain-source voltage slope}
I_DSS
Zero gate voltage drain
current (V_GS = 0)
I_GSS
V_GS(th)
R_DS(on)
Gate body leakage current
(V_DS = 0)
Gate threshold voltage
Static drain-source on
resistance
I_D = 1mA, V_GS= 0
Vdd = 400V, Id = 5A,
Vgs = 10V
V_DS = Max rating,
V_DS = Max rating,Tc = 125°C
V_GS = ±20V
V_DS= V_GS, I_D = 250µA
V_GS= 10V, I_D=2.5A
500
V
40
V/ns
1 µA
100 µA
100 nA
2
3
4
V
0.70 0.78 Ω
1. Characteristics value at turn off on inductive load
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
g_fs(1) Forward transconductance ^V_DS ^{=15V, I}_D^{= 2.5A}
4
S
C_iss ^{Input capacitance}
400
pF
C_oss ^{Output capacitance}
V_DS = 50V, f =1 MHz, V_GS = 0
35
pF
Reverse transfer
C_{rss capacitance}
4
pF
C_oss
(2)
eq.
Equivalent output
capacitance
V_GS = 0V, V_DS = 0V to 400V
67
pF
Rg Gate input resistance
f=1MHz Gate DC Bias=0
Test signal level=20mV
Open drain
6
Ω
Q_{g Total gate charge}
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD = 400V, I_D = 5A
V_GS = 10V
(see Figure 16)
12
nC
2
nC
6
nC
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. C_{oss eq}. is defined as a constant equivalent capacitance giving the same charging time as C_oss when V_DS
increases from 0 to 80% V_DSS
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