STD7N60M2 Datasheet, PDF (5/21 Pages) STMicroelectronics – Extremely low gate charge

STD7N60M2, STP7N60M2, STU7N60M2
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 5 A, V_GS = 0
5A
-
20 A
-
1.6 V
t_rr
Reverse recovery time
- 275
ns
Q_rr Reverse recovery charge
I_SD = 5 A, di/dt = 100 A/µs
V_DD = 60 V (see Figure 18)
-
1.55
nC
I_RRM Reverse recovery current
-
11
A
t_rr
Reverse recovery time
I_SD = 5 A, di/dt = 100 A/µs
- 376
ns
Q_rr Reverse recovery charge
V_DD = 60 V, T_j = 150 °C
- 2.1
nC
I_RRM Reverse recovery current
(see Figure 18)
-
11
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
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