STD7N60M2 Datasheet, PDF (1/21 Pages) STMicroelectronics – Extremely low gate charge

STD7N60M2, STP7N60M2,
STU7N60M2
N-channel 600 V, 0.86 Ω typ., 5 A MDmesh II Plus™ low Q_g
Power MOSFET in DPAK, TO-220 and IPAK packages
Datasheet - production data
Features
TAB
3
1
DPAK
TAB
3
2
1
TO-220
TAB
3
2
1
IPAK
Figure 1. Internal schematic diagram
, TAB
Order codes
STD7N60M2
STP7N60M2
STU7N60M2
V_DS @
T_Jmax
R_DS(on)
max
I_D
650 V 0.95 Ω 5 A
• Extremely low gate charge
• Lower R_DS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
AM15572v1
Description
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Q_g. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
Order codes
STD7N60M2
STP7N60M2
STU7N60M2
Table 1. Device summary
Marking
Package
DPAK
7N60M2
TO-220
IPAK
Packaging
Tape and reel
Tube
June 2013
This is information on a product in full production.
DocID024622 Rev 1
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