STD7N60M2 Datasheet, PDF (3/21 Pages) STMicroelectronics – Extremely low gate charge

STD7N60M2, STP7N60M2, STU7N60M2
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_GS
I_D
I_D
I_DM ⁽¹⁾
P_TOT
dv/dt ⁽¹⁾
dv/dt⁽²⁾
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
T_stg
Storage temperature
T_j
Max. operating junction temperature
1. I_SD ≤ 5 A, di/dt ≤ 400 A/µs; V_{DS peak} < V_(BR)DSS, V_DD=400 V
2. V_DS ≤ 480 V
Value
± 25
5
3.5
20
60
15
50
- 55 to 150
Unit
V
A
A
A
W
V/ns
°C
Symbol
Table 3. Thermal data
Parameter
R_thj-case
R_thj-pcb
Thermal resistance junction-case max
Thermal resistance junction-pcb max⁽¹⁾
R_thj-amb Thermal resistance junction-ambient max
1. When mounted on 1 inch² FR-4, 2 Oz copper board
Value
Unit
DPAK TO-220 IPAK
2.08
2.08
°C/W
50
°C/W
62.5 100 °C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
I_AR
Avalanche current, repetitive or not repetitive (pulse width
limited by T_jmax )
1.5
A
E_AS
Single pulse avalanche energy (starting T_j=25°C, I_D= I_AR;
V_DD=50)
99
mJ
DocID024622 Rev 1
3/21
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