STD70NS04ZL Datasheet, PDF (5/13 Pages) STMicroelectronics – N-channel clamped 9.5 m, 70 A DPAK fully protected SAFeFET Power MOSFET

STD70NS04ZL
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM(1)
Source-drain current
Source-drain current
(pulsed)
V_SD(2) Forward on voltage
I_SD=60 A, V_GS=0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD=60 A, di/dt = 100 A/µs,
V_DD= 25 V, Tj=150 °C
(see Figure 16)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
70 A
-
280 A
-
1.5 V
40
ns
-
40
nC
2.3
A
Doc ID 16344 Rev 1
5/13