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| STD70NS04ZL Datasheet, PDF (4/13 Pages) STMicroelectronics – N-channel clamped 9.5 m, 70 A DPAK fully protected SAFeFET Power MOSFET | |||
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Electrical characteristics
2
Electrical characteristics
STD70NS04ZL
(TCASE=25 °C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DG Clamped voltage
ID = 1 mA, VGS = 0
33
41 V
-40 < Tj < 175 °C
VDSR(CL)
Drain-source clamping
voltage (DC)
IGD(CL) = -2 mA, ID = 1 A
40
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 16 V
VDS = 16 V, Tj = 150 °C
VDS = 16 V, Tj = 175 °C
IGSS (1)
Gate-body leakage
current (VDS = 0)
VGS = ±10 V
VGS = ±10 V,Tj = 175 °C
VGS = ±15 V,Tj = 175 °C
Gate-source
VGSS breakdown voltage
IGS = ±100 µA
15
1 µA
50 µA
100 µA
2 µA
50 µA
150 µA
V
VGS(th) Gate threshold voltage
RDS(on)
Static drain-source on
resistance
VDS = VGS, ID = 1 mA
VGS = 5 V, ID = 30 A
VGS = 10 V, ID = 30 A
1
3
V
9.5 12.5 mâ¦
7.5 10.5 mâ¦
1.
GFiagtuerOex1id7e),
without zener diodes, tested
for electrical schematics
at
wafer
sorting
(IGSS
<
±
100nA
@
±
20V
Tj=25°)
(see
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1) Forward transconductance VDS =15 V, ID = 30 A
- 50 -
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
1800
pF
VDS =25 V, f=1 MHz, VGS=0 - 625 -
pF
220
pF
tr(Voff)
tf
tc
Off voltage rise time
Fall time
Cross-over time
VCLAMP= 32 V, ID=60 A,
VGS=10 V, RG=4.7 â¦
(see Figure 16)
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=32 V, ID = 60 A
VGS =5 V
(see Figure 15)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
70
ns
- 95
-
ns
185
ns
32
nC
- 12 - nC
17
nC
4/13
Doc ID 16344 Rev 1
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