STD70NS04ZL Datasheet, PDF (3/13 Pages) STMicroelectronics – N-channel clamped 9.5 m, 70 A DPAK fully protected SAFeFET Power MOSFET

STD70NS04ZL
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS
V_DG
V_GS
I_D
I_D
I_DG
I_GS
I_DM ⁽²⁾
P_TOT
Drain-source voltage (V_GS = 0)
drain-gate voltage
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C=100 °C
Drain gate current (continuous)
Gate-source current (continuous)
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Derating factor
V_ESD(G-S)
V_ESD(G-D)
V_ESD(D-S)
T_J
T_stg
Gate-source ESD (HBM-C=100 pF, R=1.5 kΩ)
Gate-drain ESD (HBM-C=100 pF, R=1.5 kΩ)
Drain-source ESD (HBM-C=100 pF, R=1.5 kΩ)
Operating junction temperature
Storage temperature
1. Voltage is limited by zener diodes
2. Pulse width limited by safe operating area
Table 3. Thermal data
Symbol
Parameter
R_thj-case
R_thj-pcb ⁽¹⁾
Thermal resistance junction-case max
Thermal resistance junction-pcb max
1. When mounted on 1 inch² 2 oz. FR4 Cu.
Table 4. Avalanche data
Symbol
Parameter
I_AS
Avalanche current, repetitive or not repetitive
(pulse width limited by Tjmax)
Single pulse avalanche energy (starting
E_AS
Tj=25 °C, I_D=I_AS, V_DD=21 V)
(see Figure 17, Figure 18)
Electrical ratings
Value
33 ⁽¹⁾
33 ⁽¹⁾
±20 ⁽¹⁾
70
50
± 50
± 50
280
110
0.73
±8
±8
±8
-55 to 175
Unit
V
V
V
A
A
mA
mA
A
W
W/°C
kV
kV
kV
°C
Value
1.36
50
Unit
°C/W
°C/W
Value
Unit
30
A
650
mJ
Doc ID 16344 Rev 1
3/13