STD60N55 Datasheet, PDF (5/12 Pages) STMicroelectronics – N-channel 55V - 8.0mΩ - 65A - DPAK - IPAK MDmesh™ low voltage Power MOSFET

STD60N55 - STD60N55-1
Electrical characteristics
Table 5. Switching on/off (inductive load)
Symbol
Parameter
Test conditions
t_d(on)
t_r
Turn-on delay time
Rise time
t_d(off)
t_f
Turn-off delay time
Fall time
V_DD = 27V, I_D = 32A,
R_G = 4.7Ω, V_GS = 10V
(see Figure 3)
V_DD = 27V, I_D = 32A,
R_G = 4.7Ω, V_GS = 10V
(see Figure 3)
Min. Typ. Max. Unit
20
ns
50
ns
35
ns
11.5
ns
Table 6.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
I_{SD Source-drain current}
I_SDM ^{(1) Source-drain current (pulsed)}
V_SD Forward on voltage
I_SD = 65A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 65A, V_DD = 30V
di/dt = 100A/µs,
Tj = 150°C(see Figure 5)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
65 A
260 A
1.5 V
47
ns
87
nC
3.7
A
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