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| STD60N55 Datasheet, PDF (4/12 Pages) STMicroelectronics – N-channel 55V - 8.0mΩ - 65A - DPAK - IPAK MDmesh™ low voltage Power MOSFET | |||
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Electrical characteristics
2
Electrical characteristics
STD60N55 - STD60N55-1
(TCASE=25°C unless otherwise specified)
Table 3. Static
Symbol
Parameter
V(BR)DSS
Drain-source breakdown
voltage
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 250µA, VGS= 0
55
VDS = Max rating,
VDS = Max rating,Tc = 125°C
V
10 µA
100 µA
VGS = ±20V
±200 nA
VDS= VGS, ID = 250µA
VGS= 10V, ID= 32A
2
4V
8.0 10.5 mâ¦
Table 4. Dynamic
Symbol
Parameter
Test conditions
Min Typ. Max. Unit
gfs (1) Forward transconductance
VDS =25V, ID=32A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
VDS = 25V, f = 1MHz, VGS=0
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 27V, ID = 65A
VGS =10V
(see Figure 2)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
50
S
2200
pF
500
pF
25
pF
33.5 45 nC
12.5
nC
9.5
nC
4/12
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