STD60N55 Datasheet, PDF (3/12 Pages) STMicroelectronics – N-channel 55V - 8.0mΩ - 65A - DPAK - IPAK MDmesh™ low voltage Power MOSFET

STD60N55 - STD60N55-1
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
V_DS
V_GS
I_D
I_D
I_DM ⁽¹⁾
P_TOT
Drain-source voltage (V_GS=0)
Gate-source voltage
Drain current (continuous) at T_C = 25°C
Drain current (continuous) at T_C = 100°C
Drain current (pulsed)
Total dissipation at T_C = 25°C
Derating factor
dv/dt ^{(2) Peak diode recovery voltage slope}
E_AS ⁽³⁾ Single pulse avalanche energy
T_j
Operating junction temperature
T_stg Storage temperature
1. Pulse width limited by safe operating area
2. I_SD <65A, di/dt <300A/µs, V_DD< V_(BR)DSS. Tj < Tjmax
3. Starting Tj=25°C, Id=32A, Vdd=40V
Table 2. Thermal resistance
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-pcb ^{(1) Thermal resistance junction-ambient max}
T_l
Maximum lead temperature for soldering purpose
1. When mounted on FR-4 board of 1inch², 2oz Cu
Value
55
± 20
65
46
260
110
0.73
8
390
-55 to 175
Value
1.36
50
275
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
Unit
°C/W
°C/W
°C
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