STD55N4F5 Datasheet, PDF (5/13 Pages) STMicroelectronics – N-channel 40 V, 7.3 mΩ, 40 A, DPAK STripFET™ V Power MOSFET

STD55N4F5
Electrical characteristics
Table 6.
Symbol
Switching on/off (resistive load)
Parameter
Test conditions
t_d(on)
t_r
Turn-on delay time
Rise time
t_d(off)
t_f
Turn-off delay time
Fall time
V_DD=20 V, I_D= 27.5 A,
R_G=4.7 Ω, V_GS=10 V
Figure 16
V_DD=20 V, I_D= 27.5 A,
R_G=4.7 Ω, V_GS=10 V
Figure 16
Min. Typ. Max. Unit
15
-
15
ns
-
ns
25
-
6
ns
-
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD=55 A, V_GS=0
I_SD=55 A,
di/dt = 100 A/µs,
V_DD= 32 V, Tj=150 °C
Figure 15
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
55 A
-
220 A
-
1.5 V
40
ns
-
55
nC
3
A
Doc ID 15661 Rev 3
5/13