STD55N4F5 Datasheet, PDF (3/13 Pages) STMicroelectronics – N-channel 40 V, 7.3 mΩ, 40 A, DPAK STripFET™ V Power MOSFET

STD55N4F5
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
V_DS Drain-source voltage (V_GS=0)
V_GS
I_D ⁽¹⁾
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
I_D
I_DM ⁽²⁾
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
P_TOT Total dissipation at T_C = 25 °C
Derating factor
dv/dt ⁽³⁾ Peak diode recovery voltage slope
E_AS ⁽⁴⁾ Single pulse avalanche energy
T_j
Operating junction temperature
T_stg Storage temperature
1. Current limited by package
2. Pulse width limited by safe operating area
3. I_SD ≤ 55 A, di/dt ≤ 400 A/µs, V_DS ≤ V_(BR)DSS, Tj ≤ Tjmax
4. Starting T_J = 25 °C, I_D = 27.5 A, V_DD = 25 V
Table 3. Thermal resistance
Symbol
Parameter
R_thj-case Thermal resistance junction-case max
R_thj-pcb ⁽¹⁾ Thermal resistance junction-ambient max
1. When mounted on 1inch² FR-4 2Oz Cu board
Electrical ratings
Value
40
± 20
55
39
220
60
0.4
15
100
- 55 to 175
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
Value
2.5
50
Unit
°C/W
°C/W
Doc ID 15661 Rev 3
3/13