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STD55N4F5 Datasheet, PDF (4/13 Pages) STMicroelectronics – N-channel 40 V, 7.3 mΩ, 40 A, DPAK STripFET™ V Power MOSFET
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Electrical characteristics
2
Electrical characteristics
STD55N4F5
(TCASE = 25 °C unless otherwise specified)
Table 4.
Symbol
Static
Parameter
V(BR)DSS
Drain-source breakdown
voltage
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage drain
current (VGS = 0)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 250 µA, VGS= 0
40
V
VDS = Max rating,
VDS = Max rating,Tc = 125 °C
1 µA
10 µA
VGS = ±20 V
100 nA
VDS= VGS, ID = 250 µA
2
4V
VGS= 10 V, ID= 27.5 A
7.3 8.5 mΩ
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Ciss
Coss
Crss
Qg
Qgs
Qgd
Input capacitance
Output capacitance
Reverse transfer capacitance
VDS =25 V, f=1 MHz, VGS=0
Total gate charge
Gate-source charge
Gate-drain charge
VDD=20 V, ID = 27.5 A
VGS =10 V
Figure 14
Min Typ. Max. Unit
1600
pF
- 230 - pF
30
pF
25
nC
-
7
- nC
6
nC
4/13
Doc ID 15661 Rev 3
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