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STD4NK100Z Datasheet, PDF (5/16 Pages) STMicroelectronics – Very low intrinsic capacitance
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STD4NK100Z
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
trr
Qrr
IRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 2.2 A, VGS=0
ISD= 2.5 A,
di/dt = 100 A/µs,
VDD=100 V
(see Figure 14)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 2.5 A,
di/dt = 100 A/µs,
VDD=100 V, Tj=150 °C
(see Figure 14)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
-
2.2 A
-
8.8 A
-
1.6 V
- 584
ns
- 2.3
µC
-
8
A
- 628
ns
- 2.5
µC
- 8.1
A
Table 8. Gate-source Zener diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)GSO Gate-source breakdown voltage Igs=± 1 mA, ID=0
30
-
V
The built-in back-to-back Zener diodes have specifically been designed to enhance the
device's ESD capability. In this respect the Zener voltage is appropriate to achieve an
efficient and cost-effective intervention to protect the device's integrity. These integrated
Zener diodes thus avoid the usage of external components.
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