STD4NK100Z Datasheet, PDF (1/16 Pages) STMicroelectronics – Very low intrinsic capacitance

STD4NK100Z
Automotive-grade N-channel 1000 V, 5.6 Ω typ., 2.2 A
SuperMESH™ Power MOSFET Zener-protected in a DPAK
Datasheet - production data
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Figure 1. Internal schematic diagram
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Features
Order code
STD4NK100Z
V_DSS
1000 V
R_DS(on)max
6.8 Ω
I_D
2.2 A
• Designed for automotive applications and
AEC-Q101 qualified
• Extremely high dv/dt capability
• 100% avalanche tested
• Gate charge minimized
• Very low intrinsic capacitance
• Zener-protected
Applications
• Switching application
Description
This device is an N-channel Zener-protected
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Power MOSFET developed using
STMicroelectronics’ SuperMESH™ technology,
achieved through optimization of ST’s well
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
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high level of dv/dt capability for the most
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demanding applications.
Order code
STD4NK100Z
Table 1. Device summary
Marking
Package
4NK100Z
DPAK
Packaging
Tape and reel
Note:
HTRB test has been performed at 80% of V_(BR)DSS according to AEC-Q101 rev. C. All the
other tests have been done according to the new rev. D.
April 2015
This is information on a product in full production.
DocID022821 Rev 2
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