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STD4NK100Z Datasheet, PDF (4/16 Pages) STMicroelectronics – Very low intrinsic capacitance
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Electrical characteristics
2
Electrical characteristics
STD4NK100Z
(TCASE=25 °C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1 mA, VGS= 0
1000
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 1000 V,
VDS = 1000 V, Tc = 125 °C
1
µA
50 µA
IGSS
Gate body leakage current
(VGS = 0)
VGS = ± 20 V
±10 µA
VGS(th) Gate threshold voltage
VDS = VGS, ID = 50 µA
3 3.75 4.5
V
RDS(on)
Static drain-source
on-resistance
VGS = 10 V, ID = 1.1 A
5.6 6.8 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25 V, f=1 MHz,
VGS=0
-
601
-
pF
-
53
-
pF
-
12
-
pF
Coss.
(1)
eq
Equivalent output
capacitance
VGS=0, VDS =0 V to 800 V
-
15
-
pF
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
VDD=500 V, ID= 1.25 A,
RG=4.7 Ω, VGS=10 V
(see Figure 16)
VDD=800 V, ID = 2.5 A
VGS =10 V
(see Figure 15)
-
15
-
ns
-
7.5
-
ns
-
32
-
ns
-
39
-
ns
-
18
-
nC
-
3.6
-
nC
-
9.2
-
nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
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DocID022821 Rev 2
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