STD40NF03L_07 Datasheet, PDF (5/13 Pages) STMicroelectronics – N-channel 30V - 0.0090ohm - 40A - DPAK Low gate charge STripFET TM II Power MOSFET

STD40NF03L
Electrical characteristics
Table 5. Source drain diode
Symbol
Parameter
Test conditions
Min.
I_SD
I_SDM ⁽¹⁾
Source-drain current
Source-drain current
(pulsed)
V_SD ⁽²⁾ Forward on voltage
I_SD = 20A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time I_SD = 40A, di/dt = 100A/µs,
Reverse recovery charge V_DD = 20V, T_j = 150°C
Reverse recovery current (see Figure 15)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Typ.
42
52
2.5
Max. Unit
40
A
160 A
1.3 V
ns
nC
A
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