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STD40NF03L_07 Datasheet, PDF (3/13 Pages) STMicroelectronics – N-channel 30V - 0.0090ohm - 40A - DPAK Low gate charge STripFET TM II Power MOSFET
STD40NF03L
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage (VGS = 0)
VDGR
Drain-gate voltage (RGS = 20 kΩ)
VGS
Gate- source voltage
ID(1)
Drain current (continuous) at TC = 25°C
ID
IDM(2)
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
Ptot
Total dissipation at TC = 25°C
Derating Factor
dv/dt (3) Peak diode recovery voltage slope
EAS (4)
Single pulse avalanche energy
Tstg
Storage temperature
Tj
Max. operating junction temperature
1. Current limited by package
2. Pulse width limited by safe operating area.
3. ISD ≤40A, di/dt ≤350A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX
4. Starting Tj = 25 °C, ID = 20A, VDD = 25V
Value
30
30
± 20
40
28
160
80
0.53
5.5
850
-55 to 175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
Table 2. Thermal data
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
TJ
Maximum lead temperature for soldering purpose
1.88
°C/W
100
°C/W
300
°C
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