STD40NF03L_07 Datasheet, PDF (4/13 Pages) STMicroelectronics – N-channel 30V - 0.0090ohm - 40A - DPAK Low gate charge STripFET TM II Power MOSFET

Electrical characteristics
2
Electrical characteristics
STD40NF03L
(T_CASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Drain-source
V_{(BR)DSS breakdown voltage}
I_DSS
Zero gate voltage
drain current (V_GS = 0)
I_GSS
V_GS(th)
R_DS(on)
Gate-body leakage
current (V_DS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
I_D = 250µA, V_GS =0
V_DS = max rating
V_DS = max rating,
T_C = 125°C
V_GS = ± 20V
V_DS = V_GS, I_D = 250µA
V_GS = 10V, I_D = 20A
V_GS = 5V, I_D = 10A
30
V
1
µA
10
µA
±100 nA
1
V
0.0090 0.0110 Ω
0.0150 0.0195 Ω
Table 4. Dynamic
Symbol
Parameter
Test conditions
g_fs ⁽¹⁾
Forward
transconductance
V_DS = 15V_, I_D = 20A
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 25V, f = 1MHz,
V_GS = 0
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V_DD = 15V, I_D = 20A
R_G = 4.7Ω V_GS = 5V
(see Figure 13)
Q_g
Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD = 15V, I_D = 40A,
V_GS = 5V, R_G = 4.7Ω
(see Figure 14)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Min. Typ. Max. Unit
23
S
1440
pF
560
pF
135
pF
22
ns
165
ns
21
ns
25
ns
22.5 30
nC
9
nC
12
nC
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