STD36P4LLF6 Datasheet, PDF (5/16 Pages) STMicroelectronics – Very low on-resistance

STD36P4LLF6
Symbol
VSD ⁽¹⁾
trr
Qrr
IRRM
Parameter
Table 7: Source drain diode
Test conditions
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0 V, ISD = 18 A
ISD = 36 A,
di/dt = 100 A/µs,
VDD = 32 V, Tj = 150 °C
(see Figure 15: "Test
circuit for inductive load
switching and diode
recovery times")
Notes:
(1)_{Pulse test: pulse duration = 300 µs, duty cycle 1.5%}
Electrical characteristics
Min.
-
-
-
Typ.
26
21
Max. Unit
1.1 V
ns
nC
-
1.7
A
For the P-channel Power MOSFET, current polarity of voltages and current have
to be reversed.
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