STD36P4LLF6 Datasheet, PDF (4/16 Pages) STMicroelectronics – Very low on-resistance

Electrical characteristics
STD36P4LLF6
2
Electrical characteristics
(T_C = 25 °C unless otherwise specified)
Table 4: Static
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 250 µA
VGS = 0 V, VDS = 40 V
IDSS
Zero gate voltage Drain
current
VGS = 0 V, VDS = 40 V,
TC = 125 °C
IGSS
Gate-body leakage
current
VDS = 0 V, VGS = ± 20 V
VGS(th)
RDS(on)
Gate threshold voltage
Static drain-source on-
resistance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 18 A
VGS = 4.5 V, ID= 18 A
Min. Typ.
40
Max. Unit
V
1
µA
10 µA
±100 nA
1
2.5
V
0.0175 0.0205
Ω
0.024 0.029
Symbol
Parameter
Ciss Input capacitance
Coss Output capacitance
Crss
Reverse transfer
capacitance
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
RG Gate input resistance
Table 5: Dynamic
Test conditions
VDS = 25 V, f = 1 MHz,
VGS = 0 V
Min.
-
-
-
VDD = 20 V, ID = 36 A,
-
VGS = 4.5 V (see Figure 14: -
"Gate charge test circuit")
-
ID = 0 A, gate DC
bias = 0 V, f = 1 MHz,
magnitude of alternative
-
signal = 20 mV
Typ.
2850
270
180
22
9.4
7.3
1.4
Max. Unit
- pF
- pF
- pF
- nC
- nC
- nC
-
Ω
Symbol
Parameter
td(on) Turn-on delay time
tr
Rise time
td(off) Turn-off-delay time
tf
Fall time
Table 6: Switching times
Test conditions
VDD = 20 V, ID = 18 A
RG = 4.7 Ω, VGS = 10 V
(see Figure 13: "Switching
times test circuit for
resistive load")
Min.
-
-
-
-
Typ.
43
47
148
19
Max. Unit
-
ns
-
ns
-
ns
-
ns
For the P-channel Power MOSFET, current polarity of voltages and current have
to be reversed.
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