STD36P4LLF6 Datasheet, PDF (3/16 Pages) STMicroelectronics – Very low on-resistance

STD36P4LLF6
Electrical ratings
1
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
Value
Unit
VDS
VGS
ID
ID
IDM⁽¹⁾
PTOT
Tstg
Tj
Drain-source voltage
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at Tc = 25 °C
Storage temperature
Maximum junction temperature
40
V
± 20
V
36
A
26
A
144
A
60
W
-55 to 175
°C
175
°C
Notes:
(1) _{Pulse width limited by safe operating area.}
Symbol
Rthj-case
Table 3: Thermal data
Parameter
Thermal resistance junction-case max
Value
2.5
Unit
°C/W
For the P-channel Power MOSFET, current polarity of voltages and current have
to be reversed.
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